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 BD676A/678A/680A/682
BD676A/678A/680A/682
Medium Power Linear and Switching Applications
* Medium Power Darlington TR * Complement to BD675A, BD677A, BD679A and BD681 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter : BD676A : BD678A : BD680A : BD682
1
TO-126 2.Collector 3.Base
1. Emitter
Value - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 -5 -4 -6 - 100 14 88 150 - 65 ~ 150
Units V V V V V V V V V A A mA W C/W C C
VCEO
Collector-Emitter Voltage : BD676A : BD678A : BD680A : BD682 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature
VEBO IC ICP IB PC Rja TJ TSTG
Electrical Characteristics TC=25C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD676A : BD678A : BD680A : BD682 Collector-Base Voltage : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 500 - 500 - 500 - 500 -2 750 750 - 2.8 - 2.5 - 2.5 - 2.5 V V V V A A A A A A A A mA Typ. Max. Units
ICBO
VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, VBE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A IC = - 2A, IB = - 40mA IC = - 1.5A, IB = - 30mA VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 1.5A
ICEO
Collector Cut-off Current : BD676A : BD678A : BD680A : BD682 Emitter Cut-off Current * DC Current Gain : BD676A/678A/680A : BD682
IEBO hFE VCE(sat)
* Collector-Emitter Saturation Voltage : BD676A/678A/680A : BD682 * Base-Emitter On Voltage : BD676A/678A/680A : BD682
VBE(on)
* Pulse Test: PW=300s, duty Cycle=1.5% Pulse
(c)2002 Fairchild Semiconductor Corporation Rev. B, September 2002
BD676A/678A/680A/682
Typical Characteristics
10000
VCE(sat)[V], SATURATION VOLTAGE
VCE = -3V
-2.4
IC = 250 IB
-2.0
hFE, DC CURRENT GAIN
-1.6
1000
-1.2
-0.8
-0.4
100 -0.1
-1
-10
-0.0 -0.1
-1
-10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-4.0 -3.6
VCE = 3V
IC(max). Pulsed IC(max). Continuous
10s
IC[A], COLLECTOR CURRENT
-2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 -0.0 -0.0
IC[A], COLLECTOR CURRENT
-3.2
DC
-1
100s
BD676A BD678A BD680A BD682
-0.1 -1 -10
1ms 10ms
-100 -1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
VBE[V], BASE-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
20
PC[W], POWER DISSIPATION
16
12
8
4
0 0 25 50
o
75
100
125
150
175
200
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
(c)2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
BD676A/678A/680A/682
Package Dimensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. B, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1


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